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ODIS Inc., with its R&D facilities located on the campus of the University of Connecticut, has developed and proven a new Optoelectronics semiconductor process called POET (Planar OptoElectronic Technology), which is uniquely capable of producing monolithic IC solutions to meet the emerging needs of both the Military and Commercial markets which requires the need for high volume, rapidly growing optoelectronics, wireless and sensors which demand greater bandwidth, increase processing power and integration, with lower power dissipation while being cost effective.
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ODIS's new and patented semiconductor fabrication process, POET is based on a unique Group III-V materials structure. The heart of POET is a unique and patented Group III-V materials system that supports monolithic fabrication of ICs containing active and passive optical elements, together with high-performance analog and digital elements. For the first time an economical integration of many optical devices together with dense, high-speed analog and high-speed, low-power digital elements are possible in monolithic ICs.
POET allows ODIS to fundamentally alter the landscape for a broad range of applications by offering components with dramatically lowered cost together with increased speed, density, and reliability.
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POET's technology platform for optoelectronic integration exploits the optoelectronic and electronic behaviors of Gallium Arsenide (GaAs) semiconductor material. One of the benefits of this material, from a space electronics perspective, is that GaAs is significantly less susceptible to x-ray and gamma-ray total integrated dose (TID) radiation. GaAs is the long-standing choice for high-frequency (e.g. RF) devices and circuits. Important to the military is ODIS's ability to integrate digital, RF, and optical technologies in a single device makes POET an important, high-performance capability that satisfies documented needs for multiple space systems and all Military Departments and Agency Tech Areas.
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Progress in the commercial electronics industry over the past four decades has both driven and been driven by industry's ability to create and serve markets with faster, cheaper, and smaller monolithic integrated circuits. Each product advance in turn becomes the driver for the next wave of IC technology. Today however, this paradigm is falling short. Particularly in the arenas of optoelectronics and very high-speed mixed-signal circuits silicon ICs will not serve, and no good monolithic technology exists. POET is perfectly positioned to address this technology void thus advancing product offerings in PCs, communications and many consumer devices which have been historically powered by technology breakthroughs such as POET.
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ODIS Receives Air Force Research Laboratory (ARFL) Contract
January 19, 2010
"A Breakthrough Technology for Air, Space and Security Applications"
ODIS, Inc., announced today that it recently received a $750,000 Award to develop “Monolithic Infra-Red Pixel Structures Enabled by Thyristor-HFET EO Logic”. Infra-Red technologies currently require cryogenic cooling to operate and use independent readout integrated circuits. The ODIS technology has been developed to provide the new “state of the art” in integrated approaches to infrared imaging combined with transistor readout circuits. ... Read Full Press Release |
