ODIS Inc., with its R&D facilities located on the campus of the University of Connecticut, has developed and proven a new Optoelectronics semiconductor process called POET (Planar OptoElectronic Technology), which is uniquely capable of producing monolithic IC solutions to meet the emerging needs of both the Military and Commercial markets which requires the need for high volume, rapidly growing optoelectronics, wireless and sensors which demand greater bandwidth, increase processing power and integration, with lower power dissipation while being cost effective.

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ODIS's new and patented semiconductor fabrication process, POET is based on a unique Group III-V materials structure. The heart of POET is a unique and patented Group III-V materials system that supports monolithic fabrication of ICs containing active and passive optical elements, together with high-performance analog and digital elements. For the first time an economical integration of many optical devices together with dense, high-speed analog and high-speed, low-power digital elements are possible in monolithic ICs.

POET allows ODIS to fundamentally alter the landscape for a broad range of applications by offering components with dramatically lowered cost together with increased speed, density, and reliability.

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